Asst. Prof. Yoon Jung Lee: Assistant Professor at Kookmin University, Korea (South)
Dr. Yoon Jung Lee is an Assistant Professor at the School of Electrical Engineering, Kookmin University, with a specialization in materials science, nanoelectronics, and semiconductor technology. She obtained her Ph.D. in Materials Science and Engineering from Seoul National University in 2022, where she worked under the guidance of Professors Ho Won Jang and Nong-Moon Hwang. Dr. Lee’s research focuses on the development of novel ferroelectric materials, metal-insulator transitions, and their integration into next-generation memory devices and neuromorphic computing systems. She combines her academic expertise with hands-on industry experience, having previously worked as a staff engineer at Samsung Electronics and as a postdoctoral researcher at Northwestern University. Dr. Lee’s work is recognized for pushing the boundaries of nanoelectronics and materials science, with a particular focus on creating energy-efficient, high-performance solutions for emerging technologies in semiconductor and memory storage applications.
Online Profiles
Dr. Yoon Jung Lee’s research has gained significant recognition within the scientific community, as evidenced by her citations and scholarly metrics. Since 2020, her work has accumulated 492 citations, with 480 citations in the past year alone. She has an h-index of 9, reflecting the impact and consistency of her publications, and an i10-index of 8, indicating that at least eight of her papers have been cited ten times or more. These metrics highlight Dr. Lee’s growing influence in the fields of materials science and nanoelectronics, underscoring her contributions to the advancement of semiconductor technologies and memory storage systems.
Education
Dr. Lee holds an integrated Ph.D. and M.S. degree in Materials Science and Engineering from Seoul National University, where she conducted pioneering research in metal-insulator transitions and ferroelectric materials. Her dissertation focused on the non-volatile control of metal-insulator transitions using ferroelectric gating, which has significant implications for low-power electronics and memory devices. Prior to this, she completed her B.S. in Materials Science and Engineering at Korea University with a perfect academic record (GPA: 4.0/4.5). Throughout her education, Dr. Lee earned several scholarships and fellowships, showcasing her academic excellence and commitment to advancing the field of materials science and nanoelectronics.
Research Focus
Dr. Lee’s research interests lie at the intersection of materials science, electronics, and nanoengineering. Her primary focus is on controlling metal-insulator transitions in materials like VO2 through ferroelectric gating, a technique that could revolutionize the design of low-power, non-volatile memory and neuromorphic devices. She is particularly interested in integrating high-mobility semiconductors and ferroelectric thin films into advanced transistor structures, as well as exploring the potential of these materials in next-generation in-memory computing systems. Additionally, Dr. Lee’s work includes developing memristive devices, such as artificial synapses, that can mimic the behavior of biological systems for applications in artificial intelligence and machine learning.
Experience
Dr. Lee’s professional journey blends academic research and industrial experience. In her current role as an Assistant Professor at Kookmin University, she leads a research group focused on developing novel materials for next-generation electronics. Prior to this, she was a postdoctoral associate at Northwestern University in the Department of Chemistry, where she collaborated with world-renowned experts in the field of nanoelectronics. Dr. Lee also gained invaluable industry experience as a staff engineer at Samsung Electronics, contributing to semiconductor research in the Vertical NAND deposition processing team. These experiences have provided her with a unique perspective on both the theoretical and practical aspects of materials science and nanoelectronics, enabling her to bridge the gap between academia and industry.
Research Timeline & Activities
Dr. Lee’s research timeline reflects a consistent progression from fundamental materials research to applied technologies in semiconductor and memory devices. After earning her Ph.D., she transitioned to postdoctoral research, where she focused on the development of ferroelectric-based devices for non-volatile memory applications. Since joining Kookmin University, Dr. Lee has led several projects funded by the Ministry of Science and ICT (MSIT) in Korea, including initiatives aimed at developing high-mobility ferroelectric transistors and innovative memory storage solutions. One of her ongoing projects involves creating stackable crossbar arrays using ferroelectric rectifiers for in-memory computing hardware, a key area of interest in both academia and industry. Her research continues to push the boundaries of semiconductor technology, with a particular emphasis on improving energy efficiency, scalability, and performance in electronic devices.
Awards & Honors
Dr. Lee’s achievements have been recognized through numerous awards and scholarships throughout her academic and professional career. Notably, she received the Best Student Academic Paper Award from the Inter-university Semiconductor Research Center in 2022, which is awarded to only two students annually from a pool of over 120 applicants. She was also honored as the Best Young Scientist by the Korean Dielectric Society in 2022 for her outstanding contributions to the field of materials science. Additionally, Dr. Lee was the recipient of the highly competitive Samsung Electronics Industry-Academic Cooperation Scholarship in 2022, awarded to one student per division across the company. These accolades highlight Dr. Lee’s exceptional academic performance and her potential to make significant contributions to semiconductor and nanoelectronics research.
Top Noted Publication
Dr. Lee’s research has resulted in several impactful publications, with her most notable being “Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating,” published in Advanced Materials in 2022. This paper introduces a groundbreaking approach to controlling the metal-insulator transition in VO2 through ferroelectric gating, paving the way for new low-power, high-performance memory devices. The work has been widely cited in the fields of nanoelectronics and materials science, demonstrating the potential for ferroelectric materials to revolutionize memory storage technologies. Dr. Lee’s ability to merge fundamental materials research with practical applications has established her as a leading figure in the development of next-generation electronic devices.
Rheological Property Criteria for Buildable 3D Printing Concrete
H. Jeong, S. J. Han, S. H. Choi, Y. J. Lee, S. T. Yi, K. S. Kim
Materials, 12 (4), 657 (2019) – 113 citations
This paper explores the critical rheological properties of concrete for 3D printing applications, contributing to the development of sustainable and efficient construction materials.Vertically Aligned Two-Dimensional Halide Perovskites for Reliably Operable Artificial Synapses
S. J. Kim, T. H. Lee, J. M. Yang, J. W. Yang, Y. J. Lee, M. J. Choi, S. A. Lee, J. M. Suh, …
Materials Today, 52, 19-30 (2022) – 92 citations
This work investigates the use of vertically aligned 2D halide perovskites in artificial synapse applications, an innovative step toward efficient neuromorphic computing.Nanoelectronics Using Metal–Insulator Transition
Y. J. Lee, Y. Kim, H. Gim, K. Hong, H. W. Jang
Advanced Materials, 36 (5), 2305353 (2024) – 61 citations
This publication presents a cutting-edge approach to utilizing metal-insulator transitions in nanoelectronics, providing a potential pathway for developing low-power, high-performance memory devices.Ambient Stable All Inorganic CsCu2I3 Artificial Synapses for Neurocomputing
K. J. Kwak, J. H. Baek, D. E. Lee, I. Im, J. Kim, S. J. Kim, Y. J. Lee, J. Y. Kim, H. W. Jang
Nano Letters, 22 (14), 6010-6017 (2022) – 58 citations
This work introduces a stable, all-inorganic artificial synapse based on CsCu2I3, which could lead to breakthroughs in low-power neurocomputing systems.Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory
J. S. Han, Q. V. Le, H. Kim, Y. J. Lee, D. E. Lee, I. H. Im, M. K. Lee, S. J. Kim, J. Kim, …
Small, 16 (41), 2003225 (2020) – 58 citations
This paper presents a new approach for developing lead-free halide perovskites for memory devices, highlighting their potential in the field of next-generation memory storage solutions.
Strengths for the Best Innovator Award
1. Pioneering Research in Ferroelectric Materials for Low-Power Electronics
Dr. Yoon Jung Lee has demonstrated exceptional innovation in the field of ferroelectric materials, particularly through her groundbreaking research on controlling metal-insulator transitions using ferroelectric gating. Her work in this area has the potential to revolutionize memory and neuromorphic computing devices, offering solutions for low-power, non-volatile memory devices that can be applied to next-generation electronics. This research aligns with the goals of sustainable technology, pushing the boundaries of nanoelectronics to create energy-efficient, high-performance devices that are critical for the future of semiconductor technologies.
2. Bridging Academia and Industry with Practical Applications
Dr. Lee’s combination of academic expertise and industry experience sets her apart as an innovator in her field. Having worked as a staff engineer at Samsung Electronics and as a postdoctoral researcher at Northwestern University, she has developed a unique perspective on both the theoretical and practical aspects of semiconductor research. Her transition from industry to academia allows her to effectively bridge the gap between cutting-edge academic research and real-world applications, ensuring that her work translates into tangible, impactful technologies for the semiconductor and electronics industries.
3. Advancing Neuromorphic Computing with Artificial Synapses
A significant part of Dr. Lee’s innovative contributions is her development of artificial synapses that mimic the behavior of biological systems for applications in artificial intelligence and machine learning. Her research in neuromorphic computing, particularly in the area of using halide perovskites and other novel materials for artificial synapses, holds promise for creating energy-efficient systems that can operate at the edge of artificial intelligence capabilities. The potential of these systems to revolutionize AI-driven technologies makes her work crucial for the future of intelligent computing.
4. Impactful Publications and Citation Metrics
Dr. Lee’s work has been widely recognized in the scientific community, as demonstrated by her high citation count and scholarly metrics. With over 492 citations and an h-index of 9, her research is influencing the fields of nanoelectronics and materials science. Notably, her work on “Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating” has been cited extensively, underscoring the transformative potential of her findings. Her strong citation metrics highlight her continued influence in both academia and industry, making her a key figure in the semiconductor research community.
5. Awards and Recognitions Reflecting Innovation and Excellence
Dr. Lee has received numerous prestigious awards, including the Best Student Academic Paper Award from the Inter-university Semiconductor Research Center (2022), the Best Young Scientist Award from the Korean Dielectric Society (2022), and the Samsung Electronics Industry-Academic Cooperation Scholarship (2022). These accolades not only validate her contributions to materials science but also underscore her potential as an innovative leader in the development of next-generation electronic devices. Such recognition highlights her ongoing commitment to excellence and her ability to drive groundbreaking advancements in her field.